The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
Researchers at The University of Osaka have developed a novel technique to enhance the performance and reliability of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices, a key component in ...
A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
In the semiconductor industry, the use of radiation-hardened power MOS devices to avoid latchup is less common than hardening logic and memories to avoid single-event upsets. Going the less-traveled ...
Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. Infineon Technologies AG introduced its first power switching ...
A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...
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