A team of researchers has proposed a new concept for magnet-based memory devices that might revolutionize information storage devices due to their potential for large-scale integration, non-volatility ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Some researchers are leaning into biology for inspiration in computing. In particular, neuromorphic computing offers a ...

Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

High-bandwidth memory (HBM) is an important part of AI processors, handling massive data processing and computations. In response, Teradyne, Inc. has launched the Magnum 7H, a next-generation memory ...

Network-attached storage (NAS) provides accessible shared space on your home network. After testing, these are my favorite NAS devices.

It’s been deemed the “perfect Samsung phone backup” and “a lifesaver if you’re running out of storage.” ...