A monolithic 1,200-V silicon snubber circuit from Melexis is designed to drive up the performance of SiC power modules used ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
To maximize system efficiency, buck regulators minimize power loss in the switching MOSFETs, inductor, capacitors, controller, and printed circuit board traces. Fairchild’s TinyBuck® family of ...
El Segundo, Calif.—International Rectifier's IRF4000 is a multiple power switch rated at 100 volts that integrates four HEXFET MOSFETs into a single Power MLP package for Power-over-Ethernet (PoE ...
New bidirectional GaN switches reduce PCB space requirements, lower power losses, and improve efficiency for smartphones, ...
Properly selected components make it easier to design modern, energy-efficient power supplies. In this article we present an ...
Infineon has expanded its XHP 2 power module portfolio with new variants incorporating CoolSiC MOSFETs 2300 V, designed for high-voltage power systems. The 2300 V class devices support DC-link ...
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Engineers Are Adapting Sourcing Strategies for IRF Alternatives and TE Connectivity Relay Changes
Recent developments in relay manufacturing, wafer technology, and MOSFET market trends are prompting engineers to adjust sourcing strategies. From TE Connectivity’s COO change for SR4 and SR6 relays ...
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